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PWRLITE LU1010DA
High Performance N-Channel POWERJFETTM with PN Diode
Features
Superior gate charge x Rdson product (FOM) Trench Power JFET with low threshold voltage Vth. Device fully "ON" with Vgs = 0.7V Optimum for "Low Side" Buck Converters Excellent for high frequency dc/dc converters Optimized for Secondary Rectification in isolated DC-DC Low Rg and low Cds for high speed switching
Description
The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn-on/turn-off, which minimizes the required dead time. A PN Diode is added for applications where a freewheeling diode is required. This product has tin plated leads.
Applications
DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies VRM Modules
IPAK Lead-free Pin Assignments
4
D G S
23 Case TO251 (IPAK) 1
N - Channel PowerJFET with PN Diode
Product Summary Rdson () 0.0045
Pin Definitions
Pin Number 1 2, 4 3 Pin Name Gate Drain Source Pin Function Description Gate. Transistor Gate Drain. Transistor Drain Source. Transistor Source VDS (V) 24V ID (A) 501
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Drain-to-Source Avalanche Energy at 25C (VDD= 6VDC, IL=60APK, L=0.3mH, RG=100 ) Junction Temperature Storage Temperature Lead Soldering Temperature, 10 seconds Power Dissipation (Derated at 25C) Symbol VDS VGS VGD ID ID EAS TJ TSTG T PD Ratings 24 -12 -28 501 100 220 -55 to 150C -65 to 150C 260C 80 Units V V V A A mJ C C C W
LD1010DA Rev 1.03 - 03-05
Thermal Resistance
Symbol RJA RJC Parameter Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Case DPAK Ratings 80 1.56 Units C/W C/W
Electrical Specifications
(TA = +25C, unless otherwise noted.) The denotes a specification which apply over the full operating temperature range. Symbol Parameter Conditions Min. Static BVDSX Breakdown Voltage ID = 0.5 mA 24 Drain to Source VGS= -4 V BVGDO Breakdown Voltage IG = -50A Gate to Drain BVGSO Breakdown Voltage IG = -50A Gate to Source RDS(ON) Drain to Source On IG = 40 mA, ID=10A Resistance2 IG = 10 mA, ID=10A IG = 5 mA, ID=10A VGS(TH) Gate Threshold Voltage VDS=0.1 V, ID=250A TCVGSTH Temperature Coefficient of VDS=0.1 V, ID=250A Gate Threshold Voltage Dynamic QGsync Total Gate Charge Sync JFET VDrive =5V,VDS=0.1V QG Total Gate Charge VDrive =5V, ID=10A,VDS=15V QGD Gate to Drain Charge VDS=13.5V to VDS=1.5V QGS Gate to Source Charge VGS =-4.5V to VDS=13.5V QSW Switching Charge VGS =-2V to VDS=1.5V RG Gate Resistance TD(ON) Turn-on Delay Time VDD=15V, ID=10A TR Rise Time VDrive = 5 V TD(OFF) Turn-off Delay Resistive Load TF Fall Time CISS Input Capacitance COSS Output Capacitance VDS=10V, VGS= -5 V, 1MHz. CGS Gate-Source Capacitance CGD Gate-Drain Capacitance CDS Drain-Source Capacitance PN Diode IR Reverse Leakage VR=20V, Vgs = -4V VF Forward Voltage IF = 1 A VF Forward Voltage IF = 10 A VF Forward Voltage IF = 20 A Qrr Reverse Recovery Charge Is = 10 A di/dt = 100A/us, Trr Reverse Recovery Time Is = 10 A di/dt = 100A/us, Notes: 1. Current is limited by bondwire; with an Rthjc = 1.56 oC/W the chip is able to carry 102A. 2. Pulse width <= 500s, duty cycle < = 2% 2 LD1010DA Typ. 28 -32 -14 3.7 3.8 3.9 -1 -2.8 12.6 15 10.5 4.5 11.4 0.4 6.7 12.4 9 4.6 1465 611 972 493 118 -28 -12 4.5 5.0 Max. Units V V V m m V mV/oC nC nC nC nC nC ns
pF
0.3 800 900 960 9.5 14.6
mA mV mV mV nC ns
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
Product Specification
Typical Operating Characteristics
(TA = +25C, unless otherwise noted.)
8 7 6
RDS(mOhms)
1.0 0.5 0.0 -0.5
Vgs (Volts)
1.0E-04 1.0E-03 IG(A) 1.0E-02 1.0E-01
5 4 3 2 1 0 1.0E-05
-1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 0 5 10 15 20
Qg (nC)
Figure 1 - RDSON vs Gate Current at ID - 10A
50 45 40 35
ID (mA)
Figure 2 - Gate Charge for VDS = 0.1V
Capacitance vs. Vds, Vgs=-5v; DPAK, 25'C
2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 5
Ciss
Coss
Crss
30 20 15 10 5 0 0 5 10 15 V D S (V ) 20 25 30
C (pF)
25
10 15 Vds (volts)
20
25
Figure 3 - Breakdown Voltage Vds vs Id
0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0.00 0.20 0.40 0.60 0.80
Figure 4 - Capacitance vs Drain Voltage Vds
0.50 0.45 0.40 0.35
VDS=12V
IG(A)
ID (A)
0.30 0.25 0.20 0.15 0.10 0.05
VDS=0.1V
VGS(V)
0.00 -10 -8 -6
VG (V)
-4
-2
0
Figure 5 - IG vs Gate Voltage VGS
Figure 6 - Transfer Characteristic
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1010DA Product Specification
3
Typical Operating Characteristics
(TA = +25C, unless otherwise noted.)
1.8 1.7
50 45 40
Igs=10mA Igs=1A Vgs=+0.5V Vgs=0V
Normalized Rdson
1.6 1.5 1.4 1.3 1.2 1.1 1.0 0 50 100 150
35 30
ID(A)
25 20 15 10 5 0 0 1 2 3 4
Vgs=-0.5V
Vgs=-1.0V
VDS(V)
5
T em p(C )
Figure 7 - RDSON =f(T); ID = -10A; IG = 50mA
0 -2 -4 -6
Figure 8 - ID vs VDS Characteristics
100
10s
Id, Drain Current (A)
ID (Amps)
-8 -10 -12 -14 -16 -18 -20 -1.00 -0.90 -0.80 -0.70 -0.60 -0.50
Ig = 40mA Single Pulse Tc = 25C
100s
10
1ms Rdson Limit Thermal Limit Package Limit 10ms DC
1 0.1
VDS (Volts)
1
10
100
Vds, Drain-to-Source Voltage (V)
Figure 9 - PN Diode Voltage vs Current
Total Pow er Dissipation (W) 100.00 80.00 60.00 40.00 20.00 0.00 0 50 100 Te m pe rature (C) 150 200
Figure 10 - Safe Operating Area
ZthJA = f(tp) (parameter D= tp/T) 1.E+00
D = 0.5 0.2
ZthJA (K/W)
Ptot (W)
0.1
1.E-01
0.05 0.02 0.01 Single Pulse tp T
P(pk)
Note: 1. Duty Factor D = tp/T 2. Peak Tj = P(pk)*ZthJA + TA
1.E-02 1.E-05
1.E-04
1.E-03
1.E-02 tp (s)
1.E-01
1.E+00
1.E+01
Figure 11 - Total Power Dissipation
4 LD1010DA
Figure 12 - Normalized Thermal Response
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
Product Specification
Ordering Information
Product Number LU1010DA PN Marking LU1010DA Package TO251 (IPAK) Notes: This product is Pb-Free and has Tin Plated leads
E B2 L2 A C2
Package and Marking Information
DIMENSIONS mm. inch DIM. TYP. MIN. MAX. TYP. MIN. MAX. A 2.19 2.40 0.086 0.094 A1 0.89 1.14 0.035 0.045
H
b b1 B2 C C2 D D1 E e H L L1 L3
0.76 0.64 5.20 0.45 0.45 5.97 5.64
1.14 0.90 5.46 0.60 0.60 6.22 0.222
0.030 0.025 0.205 0.017 0.017 0.235
0.045 0.035 0.215 0.023 0.023 0.244
L3
LU1010DA XXXXX XXXX
L1
L
L e b b1 C A1
6.35 6.73 0.250 0.265 2.28 0.090 13.19 13.06 13.32 0.514 0.525 5.95 7.6 0.234 0.300 2.03 2.29 0.079 0.090 0.63 1.14 0.025 0.045
Back View
IPAK
D
Life Support Policy
LOVOLTECH's PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF LOVOLTECH, Inc. As used herein: 1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Preliminary No Identification Needed Product Status In definition or in Design Initial Production In Production Definition This datasheet contains the design specifications for product development. Specifications may change without notice. This datasheet contains preliminary data; additional and application data will be published at a later date. Lovoltech, Inc. reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Lovoltech reserves the right to make changes at any time without notice in order to improve the design.
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1010DA Product Specification
5
D1

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